Self-aligned trench filling with high coupling ratio

ABSTRACT

Self-aligned trench filling to isolate active regions in high-density integrated circuits is provided. A deep, narrow trench is etched into a substrate between active regions. The trench is filled by growing a suitable dielectric such as silicon dioxide. The oxide grows from the substrate to fill the trench and into the substrate to provide an oxide of greater width and depth than the trench. Storage elements for a NAND type flash memory system, for example, can be fabricated by etching the substrate to form the trench after or as part of etching to form NAND string active areas. This can ensure alignment of the NAND string active areas between isolation trenches. Because the dielectric growth process is self-limiting, an open area resulting from the etching process can be maintained between the active areas. A subsequently formed inter-gate dielectric layer and control gate layer can fill the open area to provide sidewall coupling between control gates and floating gates.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the present invention are directed to high densitysemiconductor devices, such as nonvolatile memory, and systems andmethods for isolating active regions and components in high densitysemiconductor devices.

2. Description of the Related Art

Integrated circuits are constructed by electrically connecting multipleisolated devices that share a common substrate. When multiple devicesare formed on or in a common substrate, it is necessary to isolate theindividual devices using isolation technology. As the density ofintegrated circuits continues to increase, the space available forisolating devices tends to decrease. With decreased device dimensions,inter-device parasitic currents and charges can become more problematic,making isolation technology a critical component of integrated circuitfabrication.

For example, in nonvolatile semiconductor memory devices such as flashmemory, many individual storage elements are constructed from a commonsubstrate to form a memory array. These individual storage elements mustbe isolated from one another using isolation technology. In one exampleof a flash memory system, the NAND structure is used. The NAND structureincludes multiple transistors arranged in series, sandwiched between twoselect gates. The transistors in series and the select gates arereferred to as a NAND string. Isolation technologies are typicallyemployed during the device fabrication process to provide electricalisolation between adjacent NAND strings sharing a common substrate.

Numerous techniques exist for isolating devices in NAND flash memory andother types of semiconductor devices. In Local Oxidation of Silicon(LOCOS) techniques, an oxide is grown or deposited on the surface of asubstrate, followed by the deposition of a nitride layer over the oxidelayer. After patterning these layers to expose the desired isolationareas and cover the desired active areas, a trench is etched into theselayers and a portion of the substrate. An oxide is then grown on theexposed regions. The grown oxide typically grows under the depositednitride causing the encroachment of oxide into the active regions (oftenreferred to as a bird's beak). This encroachment can cause stresses andultimately defects in the silicon. Furthermore, the encroachmentdecreases the available active area for constructing devices whichlimits the density that can be achieved in the integrated circuit.Additionally, the LOCOS technique can cause alignment issues since thetrench is formed prior to forming layers such as the conductive layerused to fabricate the floating gate of a device. For example, thesubsequently formed floating gate material may not properly alignbetween two predefined trenches.

Improvements to these processes have been made by employing suchtechniques as sidewall-masked isolation (SWAMI) to decrease encroachmentinto active areas. In SWAMI, a nitride is formed on the trench wallsprior to forming the oxide to decrease the oxide's encroachment andformation of bird's beaks. While this process provides an improvement toconventional LOCOS, the nitride in the trench rises during oxidation,causing encroachment into the active areas. This technique also yieldsexcessive stress in the corners of the trench since oxide growth in thatregion is restrained. Moreover, the trenches are formed prior to devicefabrication leading to the aforementioned alignment issues.

Accordingly, there is a need for isolation technology that caneffectively isolate devices in high density semiconductor integratedcircuits while addressing the shortcomings of the prior art identifiedabove.

SUMMARY OF THE INVENTION

Self-aligned trench filling to isolate active regions in high-densityintegrated circuits is provided. A deep, narrow trench is etched into asubstrate between active regions. The deep, narrow trench can form aneffective isolation region between active regions without occupying asmuch lateral substrate area as required by other techniques such asshallow trench isolation. The trench is filled by growing a suitabledielectric such as silicon dioxide. The dielectric grows from thesubstrate to fill the trench and into the substrate to provide adielectric of greater width and depth than the trench. Storage elementsfor a NAND type flash memory system, for example, can be fabricated byetching the substrate to form the trench after or as part of etching toform NAND string active areas. This technique stands in contrast toprior art techniques (e.g., LOCOS) where the trench is formed prior todevice active areas such as a NAND string active area. This can ensurealignment of the NAND string active areas between isolation trenches.Because the dielectric growth process is self-limiting, an open arearesulting from the etching process can be maintained between the stacks.A subsequently formed inter-gate dielectric layer and control gate layercan fill the open area to provide sidewall coupling between controlgates and floating gates. In prior art techniques that employ depositionto fill trenches, the area between NAND string active areas is filledwith the dielectric that is deposited for the trench such that thecontrol gate only overlies the floating gate in a vertical direction.There can be no sidewall coupling in such prior art configurations.

In one embodiment, a method of fabricating a nonvolatile memory deviceis provided that includes forming a first dielectric layer above asubstrate and forming a first conductive layer above the firstdielectric layer. After forming these layers, the method continues byetching through the first conductive layer, the first dielectric layer,and at least a portion of the substrate to define a trench in thesubstrate between a first portion of the first conductive layer and asecond portion of the conductive layer. The trench is filled by growinga dielectric material. The method then continues by forming a seconddielectric layer above the first conductive layer and forming a secondconductive layer above the second dielectric layer.

In another embodiment, a nonvolatile memory device is provided thatincludes a substrate, a first dielectric layer formed above thesubstrate, a first conductive layer having a first portion that issubdivided to form floating gates for a first group of storage elementsof the integrated circuit and a second portion that is subdivided toform floating gates for a second group of storage elements of theintegrated circuit, and a trench etched in the substrate between thefirst portion and the second portion of the first conductive layer. Thetrench is filled with a grown dielectric. The circuit further includes asecond dielectric layer formed above the first portion and the secondportion of the first conductive layer, and a second conductive layerformed above the second dielectric layer. The second conductive layerforms control gates for the first group of storage elements and thesecond group of storage elements. The second layer is subdivided to formword lines of the integrated circuit.

In another embodiment, a method of fabricating a nonvolatile memory isprovided that includes forming an isolation trench in a substratebetween a first NAND string active area and a second NAND string activearea. The first NAND string active area and second NAND string activearea each include a first dielectric portion and a first conductiveportion. The first dielectric portion and the first conductive portionof the first NAND string active area and the second NAND string activearea are formed prior to the isolation trench. The method furtherincludes filling the trench with a grown dielectric material to isolatethe first NAND string active area from the second NAND string activearea.

Other features, aspects, and objects of the invention can be obtainedfrom a review of the specification, the figures, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a NAND string.

FIG. 2 is an equivalent circuit diagram of the NAND string depicted inFIG. 1.

FIG. 3 is a circuit diagram depicting three NAND strings.

FIG. 4 is a two-dimensional block diagram of one embodiment of a flashmemory cell that can be fabricated in accordance with one embodiment.

FIG. 5 is a three dimensional drawing of a pair of four word line longportions of two NAND strings that can be fabricated in accordance withone embodiment.

FIGS. 6A-6H depict NAND string stacks in accordance with one embodimentat various stages of a fabrication process in accordance with oneembodiment.

FIG. 7 is flowchart of a method of fabricating flash memory cells inaccordance with one embodiment.

FIG. 8 is a block diagram of one example of a memory system that can beused to implement the present invention.

FIG. 9 illustrates an example of an organization of a memory array.

FIG. 10 is a flow chart describing one embodiment of a process forprogramming non-volatile memory devices.

FIG. 11 is a flow chart describing one embodiment of a process forreading non-volatile memory devices.

DETAILED DESCRIPTION

FIG. 1 is a top view showing one NAND string. FIG. 2 is an equivalentcircuit thereof. Trench isolation techniques in accordance withembodiments are presented with respect to nonvolatile flash memory andNAND type memory for purposes of explanation. It will be appreciated bythose of oridinary skill in the art, however, that the techniques setforth are not so limited and can be utilized in many fabricationprocesses to fabricate various types of integrated circuits.

The NAND string depicted in FIGS. 1 and 2 includes four transistors 100,102, 104 and 106 in series and sandwiched between a first select gate120 and a second select gate 122. Select gate 120 connects the NANDstring to bit line 126. Select gate 122 connects the NAND string tosource line 128. Each of the transistors 100, 102, 104 and 106 includesa control gate and a floating gate. For example, transistor 100 hascontrol gate 100CG and floating gate 100FG. Transistor 102 includescontrol gate 102CG and a floating gate 102FG. Transistor 104 includescontrol gate 104CG and floating gate 104FG. Transistor 106 includes acontrol gate 106CG and a floating gate 106FG. Control gate 100CG isconnected to word line WL3, control gate 102CG is connected to word lineWL2, control gate 104CG is connected to word line WL1, and control gate106CG is connected to word line WL0.

Note that although FIGS. 1 and 2 show four memory cells in the NANDstring, the use of four transistors is only provided as an example. ANAND string can have less than four memory cells or more than fourmemory cells. For example, some NAND strings will include eight memorycells, 16 memory cells, 32 memory cells, etc.

A typical architecture for a flash memory system using a NAND structurewill include several NAND strings. For example, FIG. 3 shows three NANDstrings 202, 204 and 206 of a memory array having many more NANDstrings. Each of the NAND strings of FIG. 3 includes two selecttransistors and four memory cells. Each string is connected to thesource line by its select transistor (e.g. select transistor 230 andselect transistor 250). A selection line SGS is used to control thesource side select gates. The various NAND strings are connected torespective bit lines by select transistors 220, 240, etc., which arecontrolled by select line SGD. Each word line (WL3, WL2, WL1 and WL0) isconnected to the control gate of one memory cell on each NAND stringforming a row of cells. For example, word line WL2 is connected to thecontrol gates for memory cell 224, 244, and 252. As can be seen, eachbit line and the respective NAND string comprise the columns of thearray of memory cells. In NAND structures, it is necessary to isolatethe individual NAND strings and associated storage elements from oneanother using isolation technology.

FIG. 4 is a two-dimensional block diagram of one embodiment of a flashmemory cell such as those depicted in FIGS. 1-3 that can be fabricatedin accordance with embodiments. The memory cell of FIG. 4 includes atriple well comprising a P-substrate, an N-well, and a P-well. TheP-substrate and the N-well are not depicted in FIG. 4 in order tosimplify the drawing. Within P-well 320, are N+ doped regions 324, whichserve as source/drain regions for the memory cell. Whether N+ dopedregions 324 are labeled as source regions or drain regions is somewhatarbitrary. Therefore, the N+ doped source/drain regions 324 can bethought of as source regions, drain regions, or both.

Between N+ doped regions 324 is a channel 322. Above channel 322 is afirst dielectric area or layer 330. Above dielectric layer 330 is aconductive area or layer 332 that forms a floating gate of the memorycell. The floating gate, under low-voltage operating conditionsassociated with read or bypass operations, is electricallyinsulated/isolated from channel 322 by the first dielectric layer 330.Above floating gate 332 is a second dielectric area or layer 334. Abovedielectric layer 334 is a second conductive layer 336 that forms acontrol gate of the memory cell. In other embodiments, various layersmay be interspersed within or added to the illustrated layers. Forexample, additional layers can be placed above control gate 336, such asa hard mask. Together, dielectric 330, floating gate 332, dielectric332, and control gate 336 comprise a stack. An array of memory cellswill have many such stacks.

When programming in tunneling-based, electrically erasable programmableread-only memory (EEPROM) or flash memory devices, a program voltage istypically applied to the control gate and the bit line is grounded.Electrons from the channel are injected into the floating gate aselectrons tunnel across dielectric 330. Dielectric 330 is often referredto as a tunnel dielectric or tunnel oxide. When electrons accumulate infloating gate 332, the floating gate becomes negatively charged, and thethreshold voltage of the memory cell is raised to one of the thresholdvoltage distributions pre-defined to represent the storage of one ormore bits of data. Typically, the program voltage applied to the controlgate is applied as a series of pulses. The magnitude of the pulses isincreased with each successive pulse by a pre-determined step size.

As previously described, when constructing semiconductor-basedintegrated circuits, it is necessary to provide isolation betweenindividual devices. In the example of flash memory, it is necessary toelectrically isolate select memory cells, such as that depicted in FIG.4, from other memory cells of the storage array. FIG. 5 is athree-dimensional block diagram of two typical NAND strings 302 and 304that may be fabricated as part of a larger flash memory array. FIG. 5depicts four memory cells on strings 302 and 304. However, more or lessthan four memory cells can be used. Each of the memory cells of the NANDstring has a stack as described above with respect to FIG. 4. FIG. 5further depicts N-well 326 below P-well 320, the bit line directionalong the NAND string, and the word line direction perpendicular to theNAND string. The P-type substrate below N-well 336 is not shown in FIG.5. In one embodiment, the control gates form the word lines. Acontinuous layer of conductive layer 336 is formed which is consistentacross a word line in order to provide a common word line or controlgate for each device on that word line.

When fabricating a NAND-based non-volatile memory system, including NANDstrings as depicted in FIG. 5, it is necessary to provide electricalisolation between adjacent strings. For example, NAND string 302 must beelectrically isolated from NAND string 304 in order to provide discreetdevices with independent electrical characteristics. Isolation of thememory cells on NAND string 302 from the memory cells on NAND string 304is typically accomplished by providing an electrical barrier between thestrings in order to inhibit or prevent parasitic currents and chargesbetween adjacent memory cells.

In the embodiment depicted in FIG. 5, NAND string 302 is separated fromNAND string 304 by an open area or void 306. In typical NANDconfigurations, a dielectric material is formed between adjacent NANDstrings and would be present at the position of open area 306. Aspreviously described, many prior art techniques include forming adielectric isolation region prior to forming the stacks for each memorycell using a LOCOS process, for example.

The ability to provide electrical isolation is often measured in termsof a field threshold. The field threshold represents the amount ofcharge or current that a particular isolation technique can withstand.For example, an isolation region may provide a 10 volt field thresholdsuch that it can withstand a charge of 10 volts placed across it. Inmany modern non-volatile flash memory devices, the charge levels withinthe circuit are continuing to increase. As device dimensions decrease,the influence of a floating gate over the channel region can decrease.To properly program non-volatile flash memory devices having such smalldimensions, high program voltages are applied to the control gates. Forexample, in many non-volatile flash memory devices, a program voltage of20 volts or more can be applied. Accordingly, it necessary to provide afield threshold level between NAND strings, equal to or greater than themaximum expected voltage level present in the device. In addition tohigher charge levels within devices, the decrease in device dimensionsmakes it more difficult to provide electrical isolation between devices,given the smaller amount of area within which to isolate the devices.Looking at FIG. 5, as NAND strings 302 and 304 are progressivelyfabricated closer and closer together, it is more difficult to providean effective isolation therebetween.

FIGS. 6A through 6H depict a sequential process for forming isolationregions between active areas in an integrated circuit in accordance withone embodiment. FIG. 7 is a flow chart depicting a process for formingisolation regions during the fabrication of non-volatile memory devicessuch as that depicted in FIGS. 6A-6H. FIGS. 6A-6H and FIG. 7 depict aspecific example with respect to a NAND flash memory device. However, itwill be appreciated by those of ordinary skill in the art that thetechniques described herein are easily extendible to many types ofsemiconductor devices and can be incorporated with many numerous typesof fabrication processes. In FIGS. 6A-6H, the bit line direction,relative to the page, runs in and out of the page while the word linedirection runs left to right relative to the page. FIG. 6A depicts asubstrate 300 on and in which multiple non-volatile NAND-type flashmemory devices are to be fabricated. Substrate 300 is used genericallyto represent a substrate, but can also include P-wells and/or N-wellsformed therein, as appropriate for various implementations. For example,a P-well and N-well may be formed in substrate 300 as depicted in FIGS.4 and 5.

At step 402 of FIG. 7, implanting and associated annealing of a triplewell including substrate 300 is performed. After implanting andannealing the triple well, a dielectric layer 330 is formed abovesubstrate 300 at step 404. Dielectric 330 can form the tunnel oxide ofstorage elements. Dielectric layer 330 can include an oxide or othersuitable dielectric material in various embodiments. Dielectric layer330 can be deposited using known chemical vapor deposition (CVD)processes, metal organic CVD processes, physical vapor deposition (PVD)processes, atomic layer deposition (ALD) processes, grown using athermal oxidation process, or formed using another suitable process. Inone embodiment, dielectric 330 is about 70-100 angstroms in thickness.However, thicker or thinner layers can be used in accordance withvarious embodiments. Additionally (and optionally), other materials maybe deposited on, deposited under, or incorporated within the dielectricto form dielectric layer 330.

At step 406, a first conductive layer 332 (e.g., polysilicon) isdeposited on top of the tunnel oxide layer. First conductive layer 332will comprise the floating gates for the memory devices of the stringsbeing fabricated. In one embodiment, conductive layer 332 is polysilicondeposited using known processes as described above. In otherembodiments, other conductive materials can be used. In one embodiment,conductive layer 332 is about 500 angstroms in thickness. However,conductive layers thicker or thinner than 500 angstroms can be used inaccordance with embodiments.

After depositing the floating gate layer, a nitride layer 340 isdeposited at step 408 and an oxide layer 342 deposited at step 410.These oxide and nitride layers serve as sacrificial layers for variouslater-performed steps. Both the oxide and nitride layers can be formedusing known processes, and each layer can be about 400 angstroms inthickness. However the thickness of each of these layers can be more orless than 400 angstroms in accordance with various embodiments. Layers330, 332, 340, and 342 are preliminary NAND string active area layersthat are used to form a plurality of devices. Multiple NAND strings willbe constructed using these layers as starting layers.

After layers 330, 332, 340, and 342 have been formed, a hard mask can bedeposited (step 412) over oxide layer 342 to begin the process ofdefining the individual NAND strings of the device. After depositing ahard mask over the oxide layer, photolithography can be used to formstrips of photoresist over the areas to become the NAND strings. Afterforming the strips of photoresist, the exposed mask layers can be etchedusing anisotropic plasma etching, for example.

At step 414, the oxide layer, nitride layer, and floating gate layer areetched using the photoresist and mask to form the individual NAND stringactive areas 380, 382, and 384. The result of such a process is depictedin FIG. 6B. FIG. 6B depicts floating gate layer 332, nitride layer 340,and oxide layer 342, after etching to form three distinct preliminaryNAND string active areas that will become individual NAND strings forthe memory device. The three NAND string active areas are adjacent toone another in the word line direction.

After defining the NAND string active areas, a layer of oxide isdeposited on the exposed surfaces (step 416) to begin formation ofsidewall spacers for each defined string. After depositing the oxide, itis etched back from substrate 300 to form first sidewall spacer layers344 for each NAND string. Dielectric 330 is also etched to expose thoseareas of substrate 300 outside the spacer and in between the preliminaryactive areas. FIG. 6C depicts oxide spacer layers 344 after having beendeposited and etched.

After depositing and etching oxide spacer layers 344, a layer of nitrideis similarly deposited and etched (step 418) to form second sidewallspacer layers 346. FIG. 6C further illustrates the stacks afterdeposition and etching to form nitride spacer layers 346. Together,layers 344 and 346 form a sidewall spacer on each sidewall of each NANDstring stack. The sidewall spacers serve as a mask for the trenchetching steps to follow in order to narrow the width of the trenchesthat will be formed between adjacent NAND strings in the memory device.For example, the sidewall spacer on NAND string active area 380 and theadjacent sidewall spacer on NAND string active area 382 will be used todefine a trench between active areas 380 and 382.

After forming the sidewall spacers, a narrow deep trench is etched (step420) into substrate 300 to begin the formation of isolation regionsbetween adjacent NAND strings. FIG. 6D depicts the substrate afteretching to form trenches 350. Trenches 350 are etched between adjacentNAND string active areas. The trench has slanted walls which becomenarrower towards the bottom of the trench. Because of the formation ofsidewall spacers (layers 344 and 346) prior to etching, the width of thetrench can be narrow in comparison to trenches formed using prior arttechniques. In one embodiment, trenches 230 are about 2,000 angstromsdeep and about 300 angstroms in width at the top. However, it will beunderstood by those of ordinary skill in the art, that devices of otherdimensions can also be constructed in accordance with variousembodiments. As illustrated in FIG. 6D, oxide layer 342 serves as asacrificial layer for the etching process. The thickness of oxide layer342 is decreased during the etching process.

The formation of narrow trenches can enable decreases in overall devicedimension sizes by facilitating closer spacing of NAND strings. Becausea very deep trench is used, a high field threshold can be obtained,while still maintaining a narrow trench width. The amount of fieldthreshold accomplished by an isolation region using a trench, asdepicted in FIGS. 6A through 6H, is dependant upon the aspect ratiodefined by the width/height ratio of the trench. In accordance withembodiments, a deep, narrow trench is used in order to decrease devicedimension size, while also maintaining a suitable aspect ratio. Thus, ahigh field threshold can be maintained while decreasing devicedimensions. The use of sidewall spacers (layers 344 and 346) enables anarrow trench to be formed, while also serving as a mask, as previouslydescribed. The oxide and nitride layers will serve to constrict theetching to between the adjacent nitride spacer layers. The top of thetrench will be narrower than the space between adjacent NAND-strings byan amount equal to twice the width of each oxide spacer layer and eachnitride spacer layer.

It should be noted that the formation of floating gate layer 332 priorto etching trenches 350 avoids mis-alignment issues that may exist inprior art techniques that form an isolation region prior to forming afloating gate layer. Because the floating gate layer is formed first andetched along with the substrate to form a trench, the trench will beproperly aligned between the floating gates of memory cells on adjacentNAND strings. In prior art techniques where the trench is formed first,care must be taken to properly form the floating gate layer betweenpredefined isolation regions. The imprecision of growth and depositionprocesses may cause the floating gate to not be properly positionedbetween the isolation regions. Such is not the case in accordance withembodiments herein because the floating gate is accurately positioned inbetween the trenches due to etching after forming the floating gate.

After forming trenches 350, the trenches are filled by thermally growing(and/or depositing) an oxide or other suitable dielectric material(e.g., nitride) from the bottom and sides of the trench to substantiallyfill the trench with a grown oxide (step 422). The trench can be filledusing known thermal growth techniques for growing oxides from a siliconsubstrate. For example, exposing the silicon substrate to an oxygencontaining mixture will cause oxidation of the silicon, and theformation of silicon-dioxide within the trench. The silicon-dioxide willgrow from both the bottom of the trench and each of the sidewalls of thetrench. This growth process is self-limiting. The trench will initiallyfill from the bottom due to its narrower width at that portion, andgradually fill from the bottom and the sides as the oxide is grown. Thisallows the process to be self-limiting. As the trench is filled from thebottom and sides, the subsequent growth will be concentrated and fastestat the unfilled exposed areas. Accordingly, uniform growth of the trenchfilling oxide can be expected. In one embodiment, step 422 can include acombination of chemical vapor deposition and oxide growth. For example,a small thin layer of oxide can be deposited along the sidewalls andbottom of the trench in order to form a cushion between the siliconsubstrate and subsequently grown oxide. After forming this thin layeralong the walls and bottom of the trench, an oxide can be grown tocompletely fill the trench as previously described.

Because of the shape of the trench and the use of a self-limiting growthprocess, there will be no keyhole void (hole in the oxide) near thebottom of the trench as is common when trenches are filled usingdeposition processes. Because the oxide will grow and fill the trenchfrom the bottom first, no void will be created due to disproportionateoxide deposition at the top of the trench, as in prior art process.

FIG. 6E illustrates the result of thermally growing oxide 352 intrenches 350. Oxide 352 has filled each of trenches 350 and extendsbeyond the top of the trench, to about the level of the bottom of thefirst conductive layer 330. It is noted that the resulting width anddepth of the silicon dioxide is wider and deeper than the originallyetched trenches 350. The resulting width and depth is due to the silicondioxide not only growing from the sidewalls and the bottom of the trenchinto the trench, but also from the silicon dioxide growing from thesidewalls and the bottom of the trench into substrate 300 itself. Asillustrated, this results in an oxide that is wider and deeper than theinitial trench etched into the substrate. For example, the width ofoxide at the top of each trench extends to encompass substantially allof the space between adjacent NAND string active areas. In oneembodiment where a 300 angstrom width is etched to define the top of thetrench as depicted in FIG. 6D, the effective oxide width at the top ofthe trench can reach about 600 angstroms after growing an oxide.Additionally, the 2000 angstrom depth of the trench can be extended byoxide growth to about 2200 angstroms.

After forming and filling isolation trenches 350 with a grown oxide, awet etch process is used (step 424) to remove nitride layer 340, anyremaining portion of oxide layer 342, and the side wall spacers formedof oxide layer 344 and nitride layer 346. Step 424 exposes the tops andsides of the floating gate layers of each NAND string active area, asdepicted in FIG. 6F.

After exposing floating gate layer 332, a second dielectric layer isformed above and in between the etched portions of floating gate layer332 at step 426. The second dielectric layer forms the inter-gatedielectric for the individual storage devices of each string. Inaccordance with one embodiment, the second dielectric layer is formed ofmultiple individual layers of dielectric material. As depicted in FIG.6G for example, the dielectric layer can be formed of a first layer ofoxide 362, a second layer of nitride 360, and a third layer of oxide 364(oxide layer 364 is depicted on the outside of nitride layer 364, butwithout any substantial thickness shown in the figure.) A dielectriccomprised of oxygen/nitrogen/oxygen layers is often referred to as anONO dielectric. The total depth of the second dielectric layer can beabout 290 angstroms. For example, oxide layer 362 can be about 120angstroms, nitride layer 360 about 120 angstroms, and the second oxidelayer 364 about 50 angstroms. In other embodiments the second dielectriclayer can be greater or less than 290 angstroms and the individuallayers can be greater than or less than the specified dimensions and beformed of alternate materials. In one embodiment, the dielectric layeris formed by depositing each of the oxide and nitride layers usingprocesses such as chemical vapor deposition. The dielectric layer can bedensified using known densification techniques. The combination of a 120angstrom oxide, a 120 angstrom nitride, and a 50 angstrom oxide layerhas an effective ONO thickness of about 140 angstroms.

After forming the second dielectric layer, a second conductive layer 370is deposited over the exposed regions of the structure at step 428. Inone embodiment, conductive layer 370 is poly-silicon and forms thecontrol gates for multiple non-volatile memory cells. In one embodiment,poly-silicon layer 370 is deposited to a depth of about 2000 angstromsfrom the top of the second dielectric layer. As illustrated in FIG. 6H,poly-silicon layer 370 is not only deposited above dielectric layer 370,but also in between adjacent NAND string active areas to fill the areas366 between the floating gates of each NAND string. For example,poly-silicon layer 370 will fill the area between NAND string activearea 380 and NAND string active area 382. The control gate layer willsurround the floating gate layer (and be separated from the control gatelayer by the second dielectric layer) on three sides—the top and bothsidewalls of the floating gate. The resulting coupling force from thecontrol gate to the floating gate will include three couplingcomponents. A first component results from coupling between a bottomportion of the control gate layer and the top portion of floating gatelayer. A second and third component result from coupling betweensidewall portions of the control gate layer and the two sidewalls of thefloating gate of the stack.

Because the first floating gate layer is deposited prior to forming thetrench, the floating gates will be aligned between two trenches aspreviously described. By virtue of this, the second dielectric layer isself-aligned over each floating gate and thus provides consistentcoupling at each formed cell. Since etching occurs through the floatinggate layer and into the substrate to form the trench, consistent spacingand alignment of floating gates is achieved. Accordingly, the controlgate layer will be consistently formed around each floating gate whichleads to consistent coupling characteristics for each device. In priorart techniques where the floating gate layers are mis-aligned, thesubsequently formed control gate layer may not be consistenly formedaround each floating gate. This can lead to different couplingcharacteristics between cells.

At this point, it is useful to note a few additional characteristicsaccomplished by using the trench isolation technique in accordance withembodiments. As illustrated in FIG. 6G, a gap 366 exists between each ofthe NAND string active areas after formation of the second dielectriclayer. In prior art processes using chemical vapor deposition to filltrenches, the oxide will not only be deposited into the trench, but willalso be deposited over any other exposed layers. For example, iffloating gate layer 332 is deposited prior to filling the trenches witha chemically deposited oxide into the trench, the oxide will not onlyfill the trench as depicted in FIGS. 6E and 6F, but will also extendabove the top of the trench and over each of the floating gate layers332. The oxide will fill the gap areas such as areas 366 depicted inFIG. 6G. These processes use a chemical mechanical polishing (CMP)process to planarize the deposited oxide and etch it (and any othermaterials) back to at least the height of the floating gate layer 332.Chemical mechanical polishing processes are not capable of selectivelyetching between the stacks. Accordingly, the top of the oxide will becommensurate and level with the top of the floating gate layer 332.Accordingly, no gap is able to be created between the NAND strings, asdepicted in FIG. 6G. The subsequent deposition of a second dielectriclayer (e.g., layers 360, 362, and 364), will only deposit such adielectric layer on top of the floating gate layers. Accordingly, thesubsequently deposited control gate layer will only extend above thefloating gates, and not in between the floating gates, as depicted inFIG. 6H. Since the influence of a control gate over a respectivefloating gate is governed by the opposing surface areas of each of thelayers, this limits the achievable coupling ratio. The coupling forcesfrom the control gate to the floating gate will only extend in onedirection—from the bottom of the control gate layer to the top of thefloating gate layer. Thus, the coupling ratio in such scenarios is onlyproportional to the bottom surface area of the control gate and topsurface area of the floating gate. The coupling ratio will not beeffected by or benefit from the thickness (top to bottom relative topaper) of the floating gate layer.

However, in embodiments as depicted in FIG. 6H, the poly-silicon layeris deposited both above the floating gate layer, as well as in betweenadjacent portions of the floating gate layer. Thus, the control of thecontrol gate over the floating gate is governed by the top surface areaof the top of the floating gate due to top to bottom coupling and alsoby the thickness of poly-silicon layer 370 due to sidewall coupling.

For example, if each portion of floating gate layer 332 after etchinghas a width of λ and thickness T, the coupling achieved in prior arttechniques where the control gate only overlies the floating gate in avertical direction is equal to some constant multiplied by λ. If,however, techniques in accordance with embodiments are used such thatthe control gate layer is not only formed above the floating gate layer,but also between individual NAND string active areas as depicted in FIG.6H, the coupling is enhanced by sidewall coupling. The sidewall couplingis also equal to the same constant multiplied by the thickness T. Sincethere will be coupling from two sides, the total sidewall coupling isequal to the constant multiplied by 2T. Since the overall coupling isequal to the sidewall and top coupling values, the overall couplingratio is equal to the constant multiplied by λ+2T, rather than just λ asin prior art techniques.

After depositing control gate layer 370, the active areas can besubdivided to form word lines that are isolated from one another. Atstep 430, a mask layer can be deposited on control gate layer 370 andphotolithography used to form strips of photoresist perpendicular to theNAND string (formed in the word line direction). At step 432, theexposed portions of the mask and underlying layers can be etched usingplasma etching, ion milling, ion etching that is purely physicaletching, or another suitable process to etch the various layers and formthe individual word lines by subdividing the control gate layer, theinter-gate dielectric layer, and the floating gate layers. The etchedportions of the control gate layer form the individual word lines. Inone embodiment, etching is performed until the tunnel dielectric layeris reached. In another embodiment, etching continues through the tunneldielectric until the substrate is reached.

FIG. 8 is a block diagram of one embodiment of a flash memory systemthat can be used to implement the present invention. Memory cell array502 is controlled by column control circuit 504, row control circuit506, c-source control circuit 510 and p-well control circuit 508. Array502 can include one or more memory cells fabricated according toembodiments set forth in FIGS. 6 and 7. Column control circuit 504 isconnected to the bit lines of memory cell array 502 for reading datastored in the memory cells, for determining a state of the memory cellsduring a program operation, and for controlling potential levels of thebit lines to promote or inhibit programming and erasing. Row controlcircuit 506 is connected to the word lines to select one of the wordlines, to apply read voltages, to apply program voltages combined withthe bit line potential levels controlled by column control circuit 504,and to apply an erase voltage. C-source control circuit 510 controls acommon source line (labeled as “C-source” in FIG. 6) connected to thememory cells. P-well control circuit 508 controls the p-well voltage.

The data stored in the memory cells are read out by the column controlcircuit 504 and are output to external I/O lines via data input/outputbuffer 512. Program data to be stored in the memory cells are input tothe data input/output buffer 512 via the external I/O lines, andtransferred to the column control circuit 504. The external I/O linesare connected to controller 518.

Command data for controlling the flash memory device are input tocontroller 518. The command data informs the flash memory of whatoperation is requested. The input command is transferred to statemachine 516 that controls column control circuit 504, row controlcircuit 506, c-source control 510, p-well control circuit 508 and datainput/output buffer 512. State machine 516 can also output status dataof the flash memory such as READY/BUSY or PASS/FAIL.

Controller 518 is connected to or connectable with a host system such asa personal computer, a digital camera, or personal digital assistant,etc. It communicates with the host that initiates commands, such as tostore or read data to or from the memory array 502, and provides orreceives such data. Controller 518 converts such commands into commandsignals that can be interpreted and executed by command circuits 514,which is in communication with state machine 516. Controller 518typically contains buffer memory for the user data being written to orread from the memory array.

One exemplary memory system comprises one integrated circuit thatincludes controller 518, and one or more integrated circuit chips thateach contain a memory array and associated control, input/output andstate machine circuits. There is a trend to integrate the memory arraysand controller circuits of a system together on one or more integratedcircuit chips. The memory system may be embedded as part of the hostsystem, or may be included in a memory card (or other package) that isremovably inserted into the host systems. Such a card may include theentire memory system (e.g. including the controller) or just the memoryarray(s) with associated peripheral circuits (with the controller orcontrol function being embedded in the host). Thus, the controller canbe embedded in the host or included within the removable memory system.

With reference to FIG. 9, an exemplary structure of memory cell array502 is described. As one example, a NAND flash EEPROM is described thatis partitioned into 1,024 blocks. The data stored in each block can besimultaneously erased. In one embodiment, the block is the minimum unitof cells that are simultaneously erased. In each block, in this example,there are 8,512 columns that are divided into even columns and oddcolumns. The bit lines are also divided into even bit lines (BLe) andodd bit lines (BLo). FIG. 9 shows four memory cells connected in seriesto form a NAND string. Although four cells are shown to be included ineach NAND string, more or less than four can be used (e.g., 16, 32, oranother number). One terminal of the NAND string is connected to acorresponding bit line via a first select transistor (also referred toas a select gate) SGD, and another terminal is connected to c-source viaa second select transistor SGS.

During read and programming operations of one embodiment, 4,256 memorycells are simultaneously selected. The memory cells selected have thesame word line (e.g. WL2-i), and the same kind of bit line (e.g. evenbit lines). Therefore, 532 bytes of data can be read or programmedsimultaneously. These 532 bytes of data that are simultaneously read orprogrammed form a logical page. Therefore, in this example, one blockcan store at least eight pages. When each memory cell stores two bits ofdata (e.g. a multi-level cell), one block stores 16 pages.

In the read and verify operations, the select gates (SGD and SGS) of aselected block are raised to one or more select voltages and theunselected word lines (e.g., WL0, WL1 and WL3) of the selected block areraised to a read pass voltage (e.g. 4.5 volts) to make the transistorsoperate as pass gates. The selected word line of the selected block(e.g., WL2) is connected to a reference voltage, a level of which isspecified for each read and verify operation in order to determinewhether a threshold voltage of the concerned memory cell is above orbelow such level. For example, in a read operation of a one bit memorycell, the selected word line WL2 is grounded, so that it is detectedwhether the threshold voltage is higher than 0V. In a verify operationof a one bit memory cell, the selected word line WL2 is connected to2.4V, for example, so that as programming progresses it is verifiedwhether or not the threshold voltage has reached 2.4V. The source andp-well are at zero volts during read and verify. The selected bit lines(BLe) are pre-charged to a level of, for example, 0.7V. If the thresholdvoltage is higher than the read or verify level, the potential level ofthe concerned bit line (BLe) maintains the high level, because of theassociated non-conductive memory cell. On the other hand, if thethreshold voltage is lower than the read or verify level, the potentiallevel of the concerned bit line (BLe) decreases to a low level, forexample less than 0.5V, because of the conductive memory cell. The stateof the memory cell is detected by a sense amplifier that is connected tothe bit line and senses the resulting bit line voltage. The differencebetween whether the memory cell is programmed or erased depends onwhether or not net negative charge is stored in the floating gate. Forexample, if negative charge is stored in the floating gate, thethreshold voltage becomes higher and the transistor can be inenhancement mode of operation.

When programming a memory cell in one example, the drain and the p-wellreceive 0 volts while the control gate receives a series of programmingpulses with increasing magnitudes. In one embodiment, the magnitudes ofthe pulses in the series range from 7 volts to 20 volts. In otherembodiments, the range of pulses in the series can be different, forexample, having a starting level of higher than 7 volts. Duringprogramming of memory cells, verify operations are carried out in theperiods between the programming pulses. That is, the programming levelof each cell of a group of cells being programmed in parallel is readbetween each programming pulse to determine whether or not it hasreached or exceeded a verify level to which it is being programmed. Onemeans of verifying the programming is to test conduction at a specificcompare point. The cells that are verified to be sufficiently programmedare locked out, for example in NAND cells, by raising the bit linevoltage from 0 to Vdd (e.g., 2.5 volts) for all subsequent programmingpulses to terminate the programming process for those cells. In somecases, the number of pulses will be limited (e.g. 20 pulses) and if agiven memory cell is not sufficiently programmed by the last pulse, anerror is assumed. In some implementations, memory cells are erased (inblocks or other units) prior to programming.

FIG. 10 is a flowchart describing a method for programming anon-volatile memory system. As will be apparent to those of ordinaryskill in the art, various steps can be modified, added, or removeddepending on a specific application or implementation while stillremaining within the scope and spirit of the present disclosure. Invarious implementations, memory cells are erased (in blocks or otherunits) prior to programming. At step 650 of FIG. 10 (and in reference toFIG. 8), a data load command is issued by controller 518 and input tocommand circuit 514, allowing data to be input to data input/outputbuffer 512. The input data is recognized as a command and latched bystate machine 516 via a command latch signal, not illustrated, input tocommand circuits 514. In step 652, address data designating the pageaddress is input to row controller 506 from controller 518. The inputdata is recognized as the page address and latched via state machine516, effected by the address latch signal input to command circuits 514.At step 654, 532 bytes of program data are input to data input/outputbuffer 512. It should be noted that 532 bytes of program data arespecific to the particular implementation described, and otherimplementations will require or utilize various other sizes of programdata. That data can be latched in a register for the selected bit lines.In some embodiments, the data is also latched in a second register forthe selected bit lines to be used for verify operations. At step 656, aprogram command is issued by controller 318 and input to datainput/output buffer 512. The command is latched by state machine 316 viathe command latch signal input to command circuits 514

At step 658, Vpgm, the programming pulse voltage level applied to theselected word line, is initialized to the starting pulse (e.g. 12volts), and a program counter PC maintained by state machine 516, isinitialized at 0. At step 660, a program voltage (Vpgm) pulse is appliedto the selected word line. The bit lines that include a memory cell tobe programmed are grounded to enable programming, while the other bitlines are connected to Vdd to inhibit programming during application ofthe programming pulse.

At step 662, the states of the selected memory cells are verified. If itis detected that the target threshold voltage of a selected cell hasreached the appropriate level (for example, the programmed level forlogic 0 or a particular state of a multi-state cell), then the selectedcell is verified as programmed to its target state. If it is detectedthat the threshold voltage has not reached the appropriate level, theselected cell is not verified as programmed to its target state. Thosecells verified as programmed to their target state at step 362 will beexcluded from further programming. At step 664, it is determined whetherall cells to be programmed have been verified to have programmed totheir corresponding states, such as by checking an appropriate datastorage register designed to detect and signal such a status. If so, theprogramming process is complete and successful because all selectedmemory cells were programmed and verified to their target states. Astatus of pass is reported in step 666. If at step 664, it is determinedthat not all of the memory cells have been so verified, then theprogramming process continues. At step 668, the program counter PC ischecked against a program limit value. One example of a program limitvalue is 20. If the program counter PC is not less than 20, then theprogram process is flagged as failed and a status of fail is reported atstep 670. If the program counter PC is less than 20, then the Vpgm levelis increased by the step size and the program counter PC is incrementedat step 672. After step 672, the process loops back to step 660 to applythe next Vpgm program pulse. At the end of a successful program process,the threshold voltages of the memory cells should be within one or moredistributions of threshold voltages for programmed memory cells orwithin a distribution of threshold voltages for erased memory cells.

The flowchart of FIG. 10 depicts a single-pass programming method as canbe applied for binary storage. In a two-pass programming method as canbe applied for multi-level storage, for example, multiple programming orverification steps may be used in a single iteration of the flowchart.Steps 360-372 may be performed for each pass of the programmingoperation. In a first pass, one or more program pulses may be appliedand the results thereof verified to determine if a cell is in theappropriate intermediate state. In a second pass, one or more programpulses may be applied and the results thereof verified to determine ifthe cell is in the appropriate final state.

FIG. 11 is a flow chart describing one embodiment of a process forreading a memory cell in array 502. In step 702, a read command isreceived from the host and stored in the state machine. In step 704, anaddress is received and stored. The process of FIG. 11 assumes a fourstate memory cell, with an erased state and three programmed states.Therefore, in one embodiment, three read operations are performed inorder to read the data stored in the memory cell. If the memory haseight states, then seven read operations are performed; if the memoryhas sixteen states, then fifteen read operations are performed, etc. Instep 706, the first read operation is performed. A first read comparepoint, equivalent to a threshold voltage between state 0 and state 1 isapplied to the selected word line, and the sense amplifier on each bitline makes a binary decision as to whether the cell at the intersectionof the selected word line and the corresponding bit line is on or off.If the cell is detected to be on, then it is read as being in state 0,otherwise the cell is in state 1, 2 or 3. In other words, if thethreshold voltage of the memory cell is greater than the first readcompare point, the memory cell is assumed to be in the erased state 0.

In step 708, the second read operation is performed. A second readcompare point, equivalent to a threshold voltage between state 2 andstate 1 is applied to the selected word line, and the sense amplifier oneach bit line makes a binary decision as to whether the cell at theintersection of the selected word line and the corresponding bit line ison or off. An “off” bit line indicate that the corresponding memory cellis either in state 0 or in state 1. An “on” bit line indicates that thecorresponding memory cell is in either state 2 or state 3.

In step 710, the third read operation is performed. A third read comparepoint, equivalent to a threshold voltage between state 3 and state 2 isapplied to the selected word line, and the sense amplifier on each bitline makes a binary decision as to whether the cell at the intersectionof the selected word line and the corresponding bit line is on or off.An “off” bit line will indicate that the corresponding cell is either instate 0, in state 1, or in state 2. An “on” bit line will indicate thatthe corresponding memory cell is in state 3. The information obtainedduring the three sequential steps explained above is stored in latches.A decoder is used to combine the results of the three read operations inorder to find the state of each cell. For example, state 1 would be aresult of the following three read results: on in step 706, off in step708, and off in step 710. The above sequence of the read operations canbe reversed, corresponding to the verify waveform sequence depicted inFIG. 5. Note that other read processes can also be used with the presentinvention.

The foregoing detailed description of the invention has been presentedfor purposes of illustration and description. It is not intended to beexhaustive or to limit the invention to the precise form disclosed. Manymodifications and variations are possible in light of the aboveteaching. The described embodiments were chosen in order to best explainthe principles of the invention and its practical application to therebyenable others skilled in the art to best utilize the invention invarious embodiments and with various modifications as are suited to theparticular use contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto.

1. A method of fabricating a nonvolatile memory device, comprising:forming a first dielectric layer above a substrate; forming a firstconductive layer above said first dielectric layer; etching through saidfirst conductive layer, said first dielectric layer, and at least aportion of said substrate to define a trench in said substrate between afirst portion of said first conductive layer and a second portion ofsaid conductive layer, said step of etching is performed after said stepof forming a first conductive layer; growing a dielectric material tofill said trench; forming a second dielectric layer above said firstconductive layer; and forming a second conductive layer above saidsecond dielectric layer.
 2. The method of claim 1, wherein: said firstportion of said first conductive layer includes a top and two sidewalls;said second portion of said first conductive layer includes a top andtwo sidewalls; and said method further comprises: forming a firstsidewall spacer along a sidewall of said first portion of said firstconductive layer, and forming a second sidewall spacer along a sidewallof said second portion of said first conductive layer, said sidewall ofsaid first portion of said first conductive layer is adjacent saidsidewall of said second portion of said first conductive layer; whereinsaid steps of forming a first sidewall spacer and forming a secondsidewall spacer are performed after etching said first conductive layerand before etching said at least a portion of said substrate.
 3. Themethod of claim 2, wherein: said step of etching comprises etching saidsubstrate at a location between said first and second sidewall spacers.4. The method of claim 2, wherein said steps of forming said first andsecond sidewall spacers include: forming a layer of oxide for said firstsidewall spacer and said second sidewall spacer; etching said layer ofoxide; forming a layer of nitride for said first sidewall spacer andsaid second sidewall spacer; and etching said layer of nitride.
 5. Themethod of claim 4, wherein: said step of etching said layer of oxideincludes etching said first dielectric layer.
 6. The method of claim 2,further comprising: removing said first sidewall spacer and said secondsidewall spacer prior to forming said second dielectric layer above saidfirst conductive layer; and forming said second dielectric layer alongsaid sidewalls of said first portion of said first conductive layer andsaid second portion of said first conductive layer to definesubstantially vertical portions of said second dielectric layer.
 7. Themethod of claim 6, further comprising: forming said second conductivelayer along said substantially vertical portions of said seconddielectric layer to define substantially vertical portions of saidsecond conductive layer.
 8. The method of claim 7, wherein: saidsubstantially vertical portions of said second conductive layer areformed without etching said dielectric material grown to fill saidtrench.
 9. The method of claim 1, wherein: said step of growing saiddielectric material comprises growing an oxide by thermal oxidation. 10.The method of claim 1, wherein said step of growing said dielectricmaterial comprises: depositing a layer of oxide to partially fill saidtrench; and thermally growing oxide to complete filling of said trench.11. The method of claim 1, wherein said step of growing said dielectricmaterial to fill said trench includes: growing oxide from said substrateto fill said trench; and growing oxide into said substrate, wherein aresulting width and depth of said grown oxide are larger than a widthand depth of said etched trench.
 12. The method of claim 1, wherein:said first portion of said first conductive layer is subdivided to formfloating gates for nonvolatile storage elements of said integratedcircuit that are part of a first string of nonvolatile storage elements;said second portion of said first conductive layer is subdivided to formfloating gates for nonvolatile storage elements of said integratedcircuit that are part of a second string of nonvolatile storageelements; and at least a portion of said second conductive layer forms acontrol gate for a first nonvolatile storage element of said firststring and a second nonvolatile storage element of said second string.13. The method of claim 12, wherein: said first portion of said firstconductive layer and said second portion of said first conductive layerresult from etching through said first conductive layer; and said stepof etching includes etching said first dielectric layer to form a firstportion of said first dielectric layer and a second portion of saidfirst dielectric layer.
 14. The method of claim 1, wherein: said methodis performed as part of fabricating an array of nonvolatile NAND typeflash memory devices.
 15. The method of claim 14, wherein: said array isin communication with a host system; and said array is removable fromsaid host system.
 16. The method of claim 14, wherein: said array isembedded in a host system.
 17. A nonvolatile memory device, comprising:a substrate; a first dielectric layer formed above said substrate; afirst conductive layer having a first portion that is subdivided to formfloating gates for a first group of storage elements of said integratedcircuit and a second portion that is subdivided to form floating gatesfor a second group of storage elements of said integrated circuit; atrench etched in said substrate between said first portion and saidsecond portion of said first conductive layer, said trench is filledwith a grown dielectric; a second dielectric layer formed above saidfirst portion and said second portion of said first conductive layer;and a second conductive layer formed above said second dielectric layer,said second conductive layer forms control gates for said first group ofstorage elements and said second group of storage elements, said secondlayer is subdivided to form word lines of said integrated circuit. 18.The nonvolatile memory device of claim 17, wherein: said first portionof said first conductive layer includes a top and at least one sidewall;said second portion of said first conductive layer includes a top and atleast one sidewall, said at least one sidewall of said first portion isadjacent to said at least one sidewall of said second portion; saidsecond dielectric layer includes first portions formed above said top ofsaid first portion of said first conductive layer and said top of saidsecond portion of said first conductive layer; said second dielectriclayer includes second portions formed along said at least one sidewallof said first portion of said first conductive layer and along said atleast one sidewall of said second portion of said first conductivelayer; and said second conductive layer is further formed in an areabetween said second portions of said second dielectric layer.
 19. Thenonvolatile memory device of claim 17, wherein: said grown dielectricextends into said substrate from said etched trench such that a widthand depth of said grown dielectric is wider and deeper than a width anddepth of said trench.
 20. The nonvolatile memory device of claim 17,wherein: said first group of storage elements is a first NAND string ofnonvolatile storage elements; and said second group of storage elementsis a second NAND string of nonvolatile storage elements.
 21. Thenonvolatile memory device of claim 17, wherein: said first and secondgroup of storage elements are part of an array of nonvolatile storageelements; said array is in communication with a host system; said arrayis removable from said host system.
 22. The nonvolatile memory device ofclaim 17, wherein: said substrate includes at least one of a P-well andan N-well.
 23. A method of fabricating a NAND type nonvolatile memory,comprising: forming an isolation trench in a substrate between a firstNAND string active area and a second NAND string active area, said firstNAND string active area and said second NAND string active area eachinclude a first dielectric portion and a first conductive portion, saidfirst dielectric portion and said first conductive portion of said firstNAND string active area and said second NAND string active area areformed prior to said isolation trench; and filling said trench with agrown dielectric material to isolate said first NAND string active areafrom said second NAND string active area.
 24. The method of claim 23,further comprising: forming said first NAND string active area and saidsecond NAND string active area by: forming a first dielectric layerabove said substrate, forming a first conductive layer above said firstdielectric layer, etching said first dielectric layer to create saidfirst dielectric portion of said first NAND string active area and saidfirst dielectric portion of said second NAND string active area, andetching said first conductive layer to create said first conductiveportion of said first NAND string active area and said first conductiveportion of said second NAND string active area.
 25. The method of claim24, further comprising: forming a first sidewall spacer on a firstsidewall of said first NAND string active area; forming a secondsidewall spacer on a first sidewall of said second NAND string activearea, said first sidewall of said first NAND string active area isadjacent said first sidewall of said second NAND string active area. 26.The method of claim 25, wherein forming said isolation trench includes:etching said substrate at a location between said first sidewall spacerand said second sidewall spacer.
 27. The method of claim 25, wherein:said step of forming said first NAND string active area and said secondNAND string active area includes creating an open area between saidfirst sidewall of said first NAND string active area and said firstsidewall of said second NAND string active area.
 28. The method of claim27, further comprising: forming a second dielectric layer on a top andsaid first sidewall of said first NAND string active area; forming saidsecond dielectric layer on a top and said first sidewall of said secondNAND string active area, wherein said steps of forming said seconddielectric layer include partially filling said open area; and forming asecond conductive layer on said second dielectric layer, said step offorming said second conductive layer includes filling a remainingportion of said open area.
 29. The method of claim 28, furthercomprising: etching said second conductive layer to define a pluralityof word lines for said NAND type nonvolatile memory.
 30. The method ofclaim 23, further comprising: growing said dielectric material into aportion of said substrate surrounding said isolation trench, wherein aresulting width and depth of said dielectric material is wider anddeeper than said isolation trench.
 31. The method of claim 23, wherein:said NAND type memory includes an array of nonvolatile storage elements;said array is in communication with a host system; and said array isremovable from said host system.